Effect of Local Atomic Configuration on DX Energy Level

This publication has 7 references indexed in Scilit:

• The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
  Japanese Journal of Applied Physics, 1989
• The Vacancy-Interstitial Model of DX Centers
  Materials Science Forum, 1989
• Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
  Physical Review Letters, 1988
• Hot-electron capture to D X centers in AlxGa1−xAs at low Al mole fractions (x<0.2)
  Applied Physics Letters, 1986
• Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure
  Surface Science, 1986
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
  Japanese Journal of Applied Physics, 1985
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–
  Japanese Journal of Applied Physics, 1983