Recent progress in SiC bipolar junction transistors
- 1 January 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 361-364
- https://doi.org/10.1109/wct.2004.240154
Abstract
Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 /spl deg/C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 /spl deg/C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.Keywords
This publication has 1 reference indexed in Scilit:
- Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiCPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004