Epitaxial growth of Fe3Si/GaAs(001) hybrid structures
- 10 November 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (19) , 3912-3914
- https://doi.org/10.1063/1.1625426
Abstract
We have established an optimized growth temperature range, namely, 150 °C< <250 °C, where ferromagnetic hybrid structures with high crystalline and interfacial quality can be fabricated by molecular-beam epitaxy. The composition of the layers, which can be regarded as a Heusler alloy, was tuned within the stable phase. The layers show high magnetic moments with a value of 1050 which is close to that of bulk
Keywords
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