MBE growth and properties of Fe3(Al,Si) on GaAs(100)
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 984-988
- https://doi.org/10.1016/0022-0248(91)91119-u
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxial growth of ErAs on (100)GaAsApplied Physics Letters, 1988
- Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructuresApplied Physics Letters, 1988
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- On the growth of silver on GaAs{001} surfacesJournal of Crystal Growth, 1982
- Molecular beam epitaxial growth of single-crystal Fe films on GaAsApplied Physics Letters, 1981
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- Constitution and magnetic properties of iron-rich iron-aluminum alloysJournal of Physics and Chemistry of Solids, 1958