21 W broad area near-diffraction-limited semiconductor amplifier
- 10 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (6) , 633-635
- https://doi.org/10.1063/1.107830
Abstract
A 600 μm wide broad area single pass GaAlAs traveling wave amplifier emitted 21 W in pulsed operation. The far-field was dominated by a near-diffraction limited 0.08° wide lobe, with 16 W measured in a 0.9° angular aperture. Current dependent scattering of the output beam power to outside of the diffraction-limited lobe was observed.Keywords
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