Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen
- 19 December 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 394 (1-3) , 91-104
- https://doi.org/10.1016/s0039-6028(97)00591-8
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Transition from Island Growth to Step-Flow Growth for Si/Si(100) EpitaxyPhysical Review Letters, 1997
- Hydrogen diffusion on Si(001)Physical Review B, 1996
- Direct Tests of Microscopic Growth Models using Hot Scanning Tunneling Microscopy MoviesPhysical Review Letters, 1996
- Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001)Physical Review B, 1995
- An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)Surface Science, 1994
- Ethylene and coadsorbed hydrogen on Si(100)-(2×1): Structure, bonding, and decompositionJournal of Electron Spectroscopy and Related Phenomena, 1993
- Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfacesAdvances in Physics, 1993
- Anisotropy in surface migration of Si and Ge on Si(001)Surface Science, 1991
- Epitaxial growth of silicon on Si(001) by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Step Motion on Crystal SurfacesJournal of Applied Physics, 1966