An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)
- 10 May 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 311 (1-2) , 64-100
- https://doi.org/10.1016/0039-6028(94)90481-2
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- RHEED studies of the growth of Si(001) by gas source MBE from disilaneJournal of Crystal Growth, 1992
- Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6Journal of Crystal Growth, 1992
- Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germaneJournal of Crystal Growth, 1992
- Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2Journal of Crystal Growth, 1992
- Direct determination of step and kink energies on vicinal Si(001)Physical Review Letters, 1990
- Surface reactions in Si chemical vapor deposition from silaneJournal of Vacuum Science & Technology A, 1990
- Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °CThe Journal of Chemical Physics, 1990
- Dimer strings, anisotropic growth, and persistent layer-by-layer epitaxyPhysical Review B, 1989
- Mechanistic Studies of Chemical Vapor DepositionAnnual Review of Physical Chemistry, 1987
- Rate-determining reactions and surface species in CVD of silicon: II. The SiH2Cl2-H2-N2-HCL systemJournal of Crystal Growth, 1980