Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane

This publication has 13 references indexed in Scilit:

• Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane
  Applied Physics Letters, 1990
• Temperature dependence of growth of GexSi1−x by ultrahigh vacuum chemical vapor deposition
  Applied Physics Letters, 1990
• Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas
  Applied Physics Letters, 1990
• High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition
  Thin Solid Films, 1990
• Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications
  Thin Solid Films, 1990
• Cooperative growth phenomena in silicon/germanium low-temperature epitaxy
  Applied Physics Letters, 1988
• Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
  IEEE Electron Device Letters, 1988
• GexSi1−x strained-layer heterostructure bipolar transistors
  Applied Physics Letters, 1988
• Electronic state localization in semiconductor superlattices
  Applied Physics Letters, 1984
• GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
  Journal of Vacuum Science & Technology A, 1984