Temperature dependence of growth of GexSi1−x by ultrahigh vacuum chemical vapor deposition
- 18 June 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (25) , 2524-2526
- https://doi.org/10.1063/1.102876
Abstract
We report the deposition of epitaxial films of GexSi1−x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.Keywords
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