Selective MOVPE growth of GaAs on Si and its applications to LEDs
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 822-826
- https://doi.org/10.1016/0022-0248(91)90563-k
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlatticeJournal of Crystal Growth, 1988
- Stress variations due to microcracks in GaAs grown on SiApplied Physics Letters, 1987
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984