Electronic origin of the stability trend in TiSi2 phases with Al or Mo layers
- 5 October 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (14) , 1964-1966
- https://doi.org/10.1063/1.122336
Abstract
Through a tight-binding rigid-band approach we show that changes in the relative stability of the C54, C49, and C40 phases of TiSi2, with electrons per atom ratio, are produced by the corresponding differences in the electronic density of states at the Fermi level. In particular, by increasing this ratio the stable phase evolves from C49 to C54, and then to C40. Our microscopic model provides a straightforward interpretation of very recent experimental findings concerning the sizeable variations in the transition temperature between C49 and C54 TiSi2 in the presence of Al or Mo layers.Keywords
This publication has 13 references indexed in Scilit:
- Enhanced thermal stability of C49 TiSi2 in the presence of aluminumApplied Physics Letters, 1998
- Low temperature formation of C54–TiSi2 using titanium alloysApplied Physics Letters, 1997
- Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layerJournal of Materials Research, 1997
- Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenumApplied Physics Letters, 1996
- Fermi surface, bonding, and pseudogap in MoSi2Physica B: Condensed Matter, 1995
- Calculated structural properties of , , andPhysical Review B, 1992
- Energetics of C11b, C40, C54, and C49 structures in transition-metal disilicidesJournal of Materials Research, 1991
- Structural effects on the calculated semiconductor gap ofPhysical Review B, 1991
- Disilicide solid solutions, phase diagram, and resistivities. II. TaSi2-WSi2Journal of Applied Physics, 1987
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954