Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates

26 December 1994

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 65 (26) , 3347-3349
https://doi.org/10.1063/1.112387

Abstract

Epitaxial CuIn₃Se₅ layers were grown on CuInSe₂/Si(111) substrates by molecular beam epitaxy. Photoemission spectra of (112)‐oriented CuIn₃Se₅ and CuInSe₂ epitaxial layers were studied and the structures in the upper valence band are correlated with the Cu 3d and Se 4p density of states. The main valence band of CuInSe₂ exhibits the three peak structure (consistent with theory) while a broadband with a shoulder is observed for the CuIn₃Se₅ phase. Electron channeling and x‐ray diffraction confirmed the epitaxial growth of (112)‐oriented layer. Surface and bulk composition analyses, position of valence band maxima, and a Se related vibrational mode at 153 cm⁻¹ in Raman scattering measurements established the growth of the CuIn₃Se₅ phase.

Keywords

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