Direct growth of heteroepitaxial CuInSe2 layers on Si substrates

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Abstract
Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)‐oriented and (112)‐oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)‐oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x‐ray rocking‐curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate.