Transient capacitance studies of an electron trap at E c−E T = 0.105 eV in phosphorus-doped silicon

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Abstract
A new electron trap has been observed in electron‐irradiated n‐type silicon at Ec−ET = 0.105 eV using transient capacitance techniques. It is shown that this trap is related to another trap at Ec−ET = 0.172 eV and that one trap can be converted to the other by altering the voltage pulsing scheme across the p‐n junction. In particular, the maximum transient capacitance response from the trap at Ec−ET = 0.105 eV occurs when the majority carrier pulse width (tw ) is smaller than some time constant (τw ) and when the time‐between‐pulses (tp ) is larger than another time constant (τp ). Emission time and capture cross‐section measurements indicate that the trap at Ec−ET = 0.172 eV is closely related to the oxygen‐vacancy defect (A center). It is believed that both these traps are different configurations of the same defect, the defect possibly being an impurity atom trapped by an A center.