Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures
- 15 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (3) , 339-341
- https://doi.org/10.1063/1.105589
Abstract
Epitaxial Si films have been deposited on Si(100) at 300 °C by remote plasma‐enhanced chemical vapor deposition using SiH4/H2 mixtures with deposition rates as high as 25 Å/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1×1017 cm−3 with electron mobilities of 700 cm2 V−1s−1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.Keywords
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