Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy
- 18 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 50 (1-3) , 165-169
- https://doi.org/10.1016/s0921-5107(97)00157-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H–SiC and Al2O3 from GaCl3 and NH3Journal of Applied Physics, 1997
- Strain-related phenomena in GaN thin filmsPhysical Review B, 1996
- Defect Transitions in GaN Between 3.0 and 3.4 eVMRS Proceedings, 1996
- Scanning cathodoluminescence microscopy: A unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneitiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991