New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky-barrier heights on n-type GaAs
- 15 August 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (4) , 349-351
- https://doi.org/10.1063/1.92718
Abstract
An unusually large Schottky barrier (≳1.1 eV) is demonstrated by studies of Au on atomically clean n‐type GaAs. It is suggested that this large barrier is produced by Au moving beneath the surface and introducing new gap states close to the valence band maximum. These new gap states can overcome the defect states (produced during the adsorption process) that normally pin the Fermi energy near midgap, thus increasing the barrier height. Starting with an atomically clean surface appears essential.Keywords
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