On generation recombination and trapping kinetics in theories of small-signal electrical response

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Abstract
It is shown that small‐signal electrical response results obtained for generation‐recombination or trapping rate laws appropriate to a neutral‐center dissociation‐association mechanism encompasses the electrical response to be expected for other frequently encountered generation‐recombination or trapping rate laws under a wide range of conditions. The rate constants appearing in such kinetic expressions are related to a number of differently defined charge‐carrier lifetimes employed in the semiconductor and electrochemical literature. The ranges of charge‐carrier lifetime characteristic of semiconductors, defect solid ionic conductors, and electrolyte solutions are briefly discussed.

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