Chemical Structures of Native Oxides Formed during Wet Chemical Treatments

1 February 1989

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 28 (2A) , L296
https://doi.org/10.1143/jjap.28.l296

Abstract

The chemical structures of the native oxides formed during various wet chemical treatments were measured nondestructively by changing the effective electron escape depth. The structures of the native oxides can be characterized by the distribution of suboxide Si³⁺ in the native oxide films. If Si³⁺ is correlated with Si-H bonds, the formation rate of the native oxide during the wet chemical treatment and the interface roughness produced by photoexcited dry etching through the oxide can be explained.

Keywords

This publication has 2 references indexed in Scilit:

Depth Profiling of Si-SiO₂ Interface Structures
Japanese Journal of Applied Physics, 1986
Si-SiO2 interface structures on Si(100), (111), and (110) surfaces
Applied Physics Letters, 1983