Depth Profiling of Si-SiO2 Interface Structures
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4R)
- https://doi.org/10.1143/jjap.25.544
Abstract
The Si-SiO2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling.1) The appicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.Keywords
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