Au/H:Si(111)−(1×1)interface versusAu/Si(111)−(7×7)

The room-temperature growth of gold on Si(111) surfaces has been directly compared for nonreconstructed hydrogen-terminated surfaces and the bare $7\times 7$-reconstructed surface by means of high-resolution core-level and valence-band photoelectron spectroscopy and Auger spectroscopy. The growth modes show strong differences with gold island formation on the passivated $\mathrm{H}:\mathrm{S}\mathrm{i}\mathrm{}\left(111\right)\mathrm{}-(1\mathrm{}\times 1)$ surface. Silicon segregated on top of the deposited gold film is seen for both interfaces. The Schottky barrier is only weakly affected by the hydrogen termination.