Hydrogen-mediated epitaxy of Ag on Si(111) as studied by low-energy ion scattering
- 4 March 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (9) , 1193-1196
- https://doi.org/10.1103/physrevlett.66.1193
Abstract
We have investigated the effect of the saturation of surface dangling bonds of Si(111) surfaces with atomic hydrogen upon Ag thin-film growth. By using time-of-flight-type low-energy ion scattering-recoil analysis techniques, we find that the growth mode of Ag thin films is drastically changed by the hydrogen termination of Si(111)-7×7 surfaces and that the epitaxial growth of A-type Ag(111) films is promoted by the hydrogen atoms residing at the film/substrate interface.Keywords
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