The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching
- 1 October 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3516-3521
- https://doi.org/10.1063/1.341489
Abstract
We have tried to develop a new procedure to prepare the clean surface of a silicon single crystal. We successfully prepared the contamination free bare silicon surface with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition. X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and ultraviolet photoelectron spectroscopy measurements proved thus prepared surface has a hydrogen monoatomic layer terminating the dangling bonds of silicon. The hydrogen termination was found to have remarkable passivation effect against surface oxidation reaction. A silicon thin-film epitaxially grown on the prepared surface was confirmed to have perfect crystal structure and high-purity level by scanning electron microscopy, reflection high-energy electron diffraction, Raman spectroscopy and secondary ion mass spectroscopy.This publication has 31 references indexed in Scilit:
- Preoxidation UV Treatment of Silicon WafersJournal of the Electrochemical Society, 1987
- Effects of Substrate-Surface Cleaning on Solid Phase Epitaxial Si FilmsJapanese Journal of Applied Physics, 1987
- Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy resultsJournal of Applied Physics, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Reduction of Radiation Damage on Silicon Substrates in Magnetron Reactive Ion EtchingJournal of the Electrochemical Society, 1985
- Hydride formation on the Si(100):O surfacePhysical Review B, 1984
- Mean free path of photoelectrons in silicon and silicon oxidesPhysica Status Solidi (a), 1981
- Crystal Defects of Silicon Films Formed by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony EvaporationJournal of the Electrochemical Society, 1979
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977