Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results
- 1 November 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (9) , 3232-3234
- https://doi.org/10.1063/1.337743
Abstract
X-ray photoelectron spectroscopy and ion scattering spectroscopy studies of HF-treated silicon surfaces are described in an effort to understand the chemical termination leading to the near ideal electrical passivation of such surfaces. Results suggest a fluorine surface density of order a monolayer chemically bonded to silicon with a partial oxygen contamination due to exposure of the HF-treated wafer to air, and a physisorbed hydrocarbon layer on top.This publication has 17 references indexed in Scilit:
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Reaction of atomic fluorine with siliconJournal of Applied Physics, 1985
- Reactions of XeF2 chemisorbed on Si(111) 7×7Applied Physics Letters, 1985
- The passivation of electrically active sites on the surface of crystalline silicon by fluorinationJournal of Vacuum Science & Technology A, 1985
- Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl speciesPhysical Review B, 1984
- A system for i n s i t u studies of plasma–surface interactions using x-ray photoelectron spectroscopyJournal of Vacuum Science & Technology A, 1983
- Bond dissociation energy values in silicon-containing compounds and some of their implicationsAccounts of Chemical Research, 1981
- X-ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H filmsJournal of Applied Physics, 1980
- Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on siliconJournal of Applied Physics, 1980
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972