Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters
- 31 May 1983
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (5) , 495-498
- https://doi.org/10.1016/0038-1101(83)90107-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980
- Aluminum-silicon ohmic contact on “shallow” junctionsSolid-State Electronics, 1980
- High-performance transistors with arsenic-implanted polysil emittersIEEE Journal of Solid-State Circuits, 1976
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972