Turn-on Transient of p-n-p-n Triode †
- 1 December 1959
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 7 (6) , 523-533
- https://doi.org/10.1080/00207215908937240
Abstract
The turn-on transient of the p-n-p-n switch is analysed with simplifying assumptions. Experiments on the silicon p-n-p-n power triode show that the two mechanisms determine the current waveform during the transient. Before the centre junction becomes forward biased (switches on), the current increases nearly (or faster than) exponentially. After switch-on, the p-n-p-n switch behaves as an inductive impedance and the increase rate of current decreases. This is ascribed to the gradual modulation of conductivity of a base region of high resistance. Analytical expression is derived for the relation between base current and delay time when the step current is applied to the base.Keywords
This publication has 3 references indexed in Scilit:
- A Silicon p-n-p-n Power Triode†Journal of Electronics and Control, 1959
- Impedance of Bulk Semiconductor in Junction DiodeJournal of the Physics Society Japan, 1957
- P-N-P-N Transistor SwitchesProceedings of the IRE, 1956