A Silicon p-n-p-n Power Triode†

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Abstract
Under the approximation of equal ionization rate for electron and hole a simplified theory of a p-n-p-n switching triode is presented. This theory enables us to understand in a straightforward way the effect of controlling base current on the current voltage characteristics of the triode. Observations are made on a developmental silicon p-n-p-n power triode. The developmental unit is fabricated by the solid state diffusion technique and can block a few hundred volts in the ‘ off ’ state and pass several amperes with tho internal drop of about ono volt in the ‘ on ’ state. Both turn-off current in diode operation and base current necessary to trigger the triode into tho ‘ on ’ state aro in the vicinity of 10 mA. In order to explain the observed control characteristics of base current, it was found that we must take into account the transverse flow of base current. The decreases in turn-off current and breakdown voltage by the applied base current are caused mainly by apparent increase in saturation current of the centre junction. The increase of alpha is not much operative in our developmental unit. Given are also some design considerations of p-n-p-n power triodes.

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