Patterning of cubic and hexagonal GaN by Cl2/N2-based reactive ion etching
- 7 June 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (23) , 3471-3473
- https://doi.org/10.1063/1.124131
Abstract
Chlorine-based dry etching of hexagonal and cubic GaN epilayers grown by dc plasma-assisted molecular beam epitaxy is investigated using a conventional parallel electrode reactor. It is found that the addition of nitrogen results in a shallow maximum for etch rates at 37% N2 content in a low-pressure plasma and a monotonically decreasing etch rate in higher-pressure plasmas. Etching with a low-pressure plasma produces smooth surfaces and almost vertical sidewalls at sufficiently high etch rates.Keywords
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