Gap dependence of the tip-sample capacitance
- 15 June 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12) , 7416-7423
- https://doi.org/10.1063/1.367985
Abstract
The tip-sample capacitance has been studied in the nontunneling regime and the capacitance-distance characteristics and its dependence on the tip geometry have been determined for the gap distance 1R for sharp tips while Reff∼R for blunt tips. These results on Reff can be explained by the field concentration to the tip apex and the change of capacitance-contributing tip area with the gap distance. Capacitance calculations indicate that the capacitance of the “truncated cone + half sphere” tip well reproduces the observed C−s characteristics and its dependence on the tip geometry.This publication has 39 references indexed in Scilit:
- Electrostatic force microscopy of silver nanocrystals with nanometer-scale resolutionApplied Physics Letters, 1997
- Development of ultrahigh vacuum-atomic force microscopy with frequency modulation detection and its application to electrostatic force measurementJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Theory of Transport Through a Single Atomic JunctionJapanese Journal of Applied Physics, 1997
- Three-dimensional image interaction for nonsmooth emittersApplied Physics Letters, 1996
- Geometrical capacitance of the tip–semiconductor junctionJournal of Vacuum Science & Technology A, 1996
- Scanning Capacitace Microscope/Atomic Force Microscope/Scanning Tunneling Microscope Study of Ion-Implanted Silicon SurfacesJapanese Journal of Applied Physics, 1995
- The ultrafast response of a scanning tunneling microscopePhysica Status Solidi (b), 1995
- Charging effects observed by low-temperature scanning tunnelling microscopy of gold islandsSurface Science, 1995
- Voltage-activated charge motion measured by a mesoscopic two-tunnel-junction systemPhysical Review B, 1994
- Single-Electron Tunnelling at Room Temperature with Adjustable Double-Barrier JunctionsEurophysics Letters, 1994