Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution

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Abstract
Stripe direction dependence of mesa angle formed on (100) InP substrate was investigated by selective wet chemical etching using HCl solution with a GaInAs epitaxial mask layer. As a result, it was found that undercut-free etching can be nearly obtained with the stripe formed along the direction whereas large undercut due to anomalous etching occurred along the direction.