Arsenic Clustering in Silicon

Publisher Website
Google Scholar
Abstract
Large decreases in the conductivity of arsenic‐doped silicon have been observed during 500–970°C heat treatments. The rate of conductivity change depends upon the prior quenching rate from diffusion temperature to room temperature. These conductivity changes are reversed by higher‐temperature treatments. The relationship between the electrically active arsenic, as calculated from the conductivity, and the total arsenic is shown to be consistent with a model of substitutional arsenic atoms being nonionized when in a cluster or in a complex involving one or more vacancies.