On the performance limits for Si MOSFETs: a theoretical study
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (1) , 232-240
- https://doi.org/10.1109/16.817590
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The silicon MOSFET from a transmission viewpointSuperlattices and Microstructures, 1998
- Elementary scattering theory of the Si MOSFETIEEE Electron Device Letters, 1997
- Scaled silicon MOSFETs: degradation of the total gate capacitanceIEEE Transactions on Electron Devices, 1997
- Indium channel implant for improved short-channel behavior of submicrometer NMOSFETsIEEE Electron Device Letters, 1993
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965