On the ‘excess white noise’ in MOS transistors
- 31 December 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (12) , 927-936
- https://doi.org/10.1016/0038-1101(69)90013-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Surface states and 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966
- The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Theory of noise in metal oxide semiconductor devicesIEEE Transactions on Electron Devices, 1965
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965