Sharp 1.54 µm luminescence from porouserbium implanted silicon
- 23 November 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (24) , 2132-2133
- https://doi.org/10.1049/el:19951439
Abstract
Sharp luminescence at 1.54 µm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.Keywords
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