Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A) , L524
- https://doi.org/10.1143/jjap.29.l524
Abstract
Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 1018 cm-3 of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 µm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.Keywords
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