Photoluminescence decay of 1.54 μm Er 3+ emission in Si and III-V semiconductors
- 24 November 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (24) , 1502-1503
- https://doi.org/10.1049/el:19881025
Abstract
The luminescence lifetime of the 1.54 μm Er3+ emission has been studied in a variety of Si and III-V semiconductor host materials. The ≈1 millisecond lifetimes observed in all hosts indicate that the Er emission is largely radiative, and suggests that Er may be the rare earth dopant best suited for device applications. Additional competing nonradiative effects are seen to appear for certain growth conditions.Keywords
This publication has 1 reference indexed in Scilit:
- The Implantation Of MeV Er Into SiPublished by SPIE-Intl Soc Optical Eng ,1985