Catalytic chemical vapor deposition method to obtain high quality amorphous silicon and silicon-germanium
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 1379-1382
- https://doi.org/10.1016/0022-3093(87)90330-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited PlasmaJapanese Journal of Applied Physics, 1987
- Catalytic Chemical Vapor Deposition (CTC–CVD) Method Producing High Quality Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1986
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976