Sheet Resistivity of the Epitaxially Grown Germanium Layer

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Abstract
The vapor deposited layer of germanium usually contains a considerable number of lattice imperfections lowering its resistivity. The distribution of the defect concentrations is not uniform over the grown layer; it is maximum at the interface between the substrate and the grown layer and it decreases as leaving the interface, to disappear almost perfectly at a distance 10∼20 µ from the interface. Such a non-uniform distribution is essentially the same, whether the layer will be produced through the open tube or the closed tube process, and whether they will be vapor-etched in situ or not. The results suggest that the mechanism producing the imperfection centers is determined by the surface condition of the substrate or the existence of non-equilibrium adsorption state.

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