LEIT effect in metal-insulator-semiconductor tunnel junctions
- 15 November 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (10) , 858-860
- https://doi.org/10.1063/1.90214
Abstract
Light emission via inelastic tunneling (LEIT) has been observed from the metal‐insulator‐semiconductor tunnel‐junction Al‐Al2O3‐ Sn‐doped indium oxide (ITO). The spectra exhibit the bias‐voltage‐dependent upper‐frequency quantum cutoff relation. These devices were stable at room temperature for months at a time while biased to 3 V. The external quantum efficiency of this metal‐insulator‐semiconductor system is about 0.1 that of the metal‐insulator‐metal system Al‐Al2O3‐Ag. Enhancement of the light emission using silver particle resonators is also reported.Keywords
This publication has 10 references indexed in Scilit:
- Light emission from gold particles excited by electron tunnelingApplied Physics Letters, 1978
- Stable room-temperature light emission from metal-insulator-metal junctionsApplied Physics Letters, 1978
- Theory of surface-plasmon excitation in metal-insulator-metal tunnel junctionsPhysical Review B, 1977
- Enhancement of light emission from metal-insulator-metal tunnel junctionsApplied Physics Letters, 1977
- Light Emission from Inelastic Electron TunnelingPhysical Review Letters, 1976
- Optical and electrical properties of doped In2O3 filmsPhysica Status Solidi (a), 1975
- Characterization of transparent conductive thin films of indium oxideJournal of Vacuum Science and Technology, 1975
- Surface Plasmons in Thin FilmsPhysical Review B, 1969
- Observations of Surface Plasmon Excitation by Tunneling Electrons in GaAs-Pb Tunnel JunctionsPhysical Review Letters, 1969
- Radiative Decay of Coulomb-Stimulated Plasmons in SpheresPhysical Review B, 1968