The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells
- 15 May 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (10) , 5126-5130
- https://doi.org/10.1063/1.340414
Abstract
We have measured the current‐voltage characteristics of a‐Si:H p‐i‐n solar cells having open‐circuit voltages (Voc) between 0.70 and 0.90 V as a function of temperature and light intensity. The diode parameters (diode factor, saturation current density, and built‐in voltage) were calculated in the light and in the dark. We find that parameters obtained in the dark have no relevance to the analysis of Voc, but they do indicate that tunneling may be a significant effect in the dark. The Voc is dominated by recombination at the p/i interface or in the i layer near this interface. Reducing interface recombination with a carbon buffer layer and reducing bulk recombination with less i layer impurities improves Voc by reducing the forward recombination current density.This publication has 15 references indexed in Scilit:
- Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilaneJournal of Applied Physics, 1987
- Measurement techniques for evaluation of a-Si : H solar cellsSolar Cells, 1986
- Amorphous silicon p-i-n solar cells with graded interfaceApplied Physics Letters, 1986
- Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cellsApplied Physics Letters, 1986
- Theoretical analysis on the limitations of the open-circuit voltage of a hydrogenated amorphous silicon p-i-n solar cellApplied Physics A, 1986
- Experimental study of bulk limitation of the current in hydrogenated amorphous silicon diodesJournal of Non-Crystalline Solids, 1985
- Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodesJournal of Applied Physics, 1985
- A comparison of single- and double-carrier injection in amorphous silicon alloysJournal of Applied Physics, 1985
- Physics of amorphous silicon alloy p-i-n solar cellsJournal of Applied Physics, 1985
- Current transport in boeing (Cd, Zn)/CuInSe2solar cellsIEEE Transactions on Electron Devices, 1984