Epitaxial Silicides: a Summary of Recent Developments
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 86 references indexed in Scilit:
- New Silicide Interface Model from Structural Energy CalculationsPhysical Review Letters, 1988
- Low-temperature transport properties of ultrathin CoSi2 epitaxial filmsApplied Physics Letters, 1987
- Characterization of Ultrathin Cosi2 on Si(111) Layers.MRS Proceedings, 1987
- High-temperature nucleation and silicide formation at the Co/Si(111)-7×7 interface: A structural investigationPhysical Review B, 1986
- Surface structure of epitaxialcrystals grown on Si(111)Physical Review B, 1986
- Electronic states at silicide-silicon interfacesPhysical Review Letters, 1986
- Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxyJournal of Vacuum Science & Technology B, 1985
- Formation and structure of epitaxial nickel silicide on Si{111}Physical Review B, 1983
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Thin Films—Interdiffusion and ReactionsJournal of the Electrochemical Society, 1979