Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
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- 24 April 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (17) , 2409-2411
- https://doi.org/10.1063/1.126360
Abstract
A dramatic increase of the conduction band electron mass in a nitrogen-containing III–V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6×1019 cm−3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III–V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III–N–V alloys.Keywords
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