Gas-source MBE of GaInNAs for long-wavelength laser diodes
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 188 (1-4) , 255-259
- https://doi.org/10.1016/s0022-0248(98)00060-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of GaInNAs/GaAslaser diodeElectronics Letters, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Metalorganic vapor phase epitaxy of GaP1−xNx alloys on GaPApplied Physics Letters, 1993
- Heteroepitaxial Growth of GaN1-xPx (x≲0.09) on Sapphire SubstratesJapanese Journal of Applied Physics, 1992
- Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen contentApplied Physics Letters, 1992