Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon
- 15 August 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (4) , 1776-1781
- https://doi.org/10.1063/1.368334
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidationApplied Physics Letters, 1997
- Scanning tunneling microscopy based on the conductivity of surface adsorbed water. Charge transfer between tip and sample via electrochemistry in a water meniscus or via tunneling?Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopyJournal of Applied Physics, 1995
- Mechanisms of surface anodization produced by scanning probe microscopesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Very sharp gold and platinum tips to modify gold surfaces in scanning tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscopeApplied Physics Letters, 1995
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM DiodeJapanese Journal of Applied Physics, 1995
- Maskless patterning of silicon surface based on scanning tunneling microscope tip-induced anodization and chemical etchingApplied Physics Letters, 1994
- Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in 40% NH4F: Observation of an optimum etch durationApplied Physics Letters, 1993
- Selective area oxidation of silicon with a scanning force microscopeApplied Physics Letters, 1993