Detection of residual defects in silicon doped by neutron transmutation
- 1 January 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (1) , 118-121
- https://doi.org/10.1063/1.359376
Abstract
Proton implantation into neutron transmutation doped (NTD) silicon generates three hydrogen-related effective mass-like donors with binding energies between 35 and 44 meV. The donors are formed by the complexing of hydrogen with damage induced by the irradiation. Our results indicate residual defects even in well annealed NTD silicon.This publication has 9 references indexed in Scilit:
- Shallow hydrogen-related donors in siliconPhysical Review B, 1993
- Ball-milling-induced amorphization incompounds: A parametric studyPhysical Review B, 1993
- Defects created by hydrogen implantation into siliconMaterials Science and Engineering: B, 1989
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Far infrared photoconductivity from majority and minority impurities in high purity Si and GeSolid State Communications, 1974
- EPR of conduction electrons produced in silicon by hydrogen ion implantationPhysica Status Solidi (a), 1974
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- Shallow Donor State Produced by Proton Bombardment of SiliconJapanese Journal of Applied Physics, 1971