Defects created by hydrogen implantation into silicon
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 47-50
- https://doi.org/10.1016/0921-5107(89)90214-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Hydrogen in Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Study of defects in silicon after low energy H+ implantation by DLTS measurementsPhysica Status Solidi (a), 1987
- Hydrogen-related deep levels in proton-bombarded siliconJournal of Physics C: Solid State Physics, 1984
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- Recombination luminescence in irradiated silicon-effects of thermal annealing and lithium impurity†Radiation Effects, 1971
- Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†Radiation Effects, 1971
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969