Recombination luminescence from ion implanted silicon
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 30 (2) , 97-106
- https://doi.org/10.1080/00337577608233525
Abstract
Peaks at 0.790, 0.970, 1.018, 1.080, 1.034 and 1.039 eV in the photoluminescence spectra observed from pulled, float zone, and Lopex silicon implanted at room temperature with 150 keV boron and phosphorus ions to fluences from 1012 to 1015 ions/cm2 are reported. Data is presented describing the effects of annealing, fluence, ion species and substrate on these lines and defect models are proposed for the recombination centers.Keywords
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