Low-temperature photoluminescence from boron ion implanted Si
- 1 January 1974
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 21 (4) , 225-228
- https://doi.org/10.1080/00337577408232409
Abstract
Low-temperature photoluminescence has been used to investigate the lattice damage created by boron ion implantation in Si. Silicon wafers were implanted with 120 keV B+ ions to fluences of 1013 and 1014 ions/cm2 at room temperature. Annealing effects and the flux dependence of the luminescence spectra are reported. In agreement with previous results for electron irradiation, luminescence peaks attributed to the divacancy and the Si-G15 (K) center are observed. In addition, zcro-phonon peaks which are not found in electron-irradiated Si are reported. These new peaks may be due to cluster defects containing boron.Keywords
This publication has 7 references indexed in Scilit:
- Recombination luminescence in irradiated silicon-effects of thermal annealing and lithium impurity†Radiation Effects, 1971
- Recombination luminescence in irradiated silicon-effects of uniaxial stress and temperature variations†Radiation Effects, 1971
- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Free exciton motion in crystals and exciton-phonon interactionJournal of Physics and Chemistry of Solids, 1966
- Oxygen-Defect Complexes in Neutron-Irradiated SiliconJournal of Applied Physics, 1966