AVALANCHE BREAKDOWN VOLTAGE OF GaAs p+-n-n+ DIODE STRUCTURES
- 1 June 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (11) , 343-345
- https://doi.org/10.1063/1.1652679
Abstract
The ionization rates of GaAs are first empirically determined from breakdown voltage measurements of p+‐n junctions with thick n layers. The theoretical analysis is then extended to p+‐n‐n+ structures in which space‐charge punch‐through occurs before breakdown takes place. The avalanche breakdown voltages of GaAs p+‐n‐n+ diode structures are calculated as a function of the n layer thickness W as well as the doping density n. Comparison of the theoretical calculation with experimental data shows very good agreement.Keywords
This publication has 2 references indexed in Scilit:
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- THE VOLTAGE BREAKDOWN OF GaAs ABRUPT JUNCTIONSApplied Physics Letters, 1963