Relation between hole density and impurity density in ZnMgSSe semiconductors
- 20 June 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3434-3436
- https://doi.org/10.1063/1.111233
Abstract
Using amphoteric native defect model [Walukiewicz, Phys. Rev. B 37, 4760 (1988)], we have considered the energy‐gap Eg dependence of nitrogen doping in ZnMgSSe semiconductors. We have explained the energy‐gap Eg dependence of saturated hole concentration in ZnMgSSe semiconductors based on the amphoteric native defect model and available effective hole masses in ZnSe using the valence band discontinuity ΔEv as a fitting parameter. The Fermi‐level stabilization energy EFS and the pinned Fermi‐level energy ESI are, to a good approximation, universal for II‐VI materials as well as for III‐V materials. We have estimated the ESI is located at 1.895 eV below EFS. It is indicated that the band‐gap discontinuity between ZnSe and ZnMgSSe is ΔEc: ΔEv=0.55:0.45 if effective hole mass is 1.4 m0 for ZnMgSSe and ΔEc:ΔEv=0.67:0.33 if effective hole mass is 0.6 m0.Keywords
This publication has 10 references indexed in Scilit:
- Continuous-wave, room temperature, ridge waveguide green-blue diode laserElectronics Letters, 1993
- Room temperature continuous operation of blue-green laser diodesElectronics Letters, 1993
- Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V SemiconductorsMRS Proceedings, 1993
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron ResonanceJapanese Journal of Applied Physics, 1992
- Characterization of ZnSe/GaAs heterostructure using transverse acoustoelectric voltage spectroscopyApplied Physics Letters, 1992
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Low-resistivity p-type ZnSe through surface Fermi level engineeringApplied Physics Letters, 1991
- Self-compensation through a large lattice relaxation in p-type ZnSeApplied Physics Letters, 1989
- Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfacesJournal of Vacuum Science & Technology B, 1988
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971